參數(shù)資料
型號(hào): 2SK2745
元件分類(lèi): JFETs
英文描述: 50 A, 50 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: 2-16C1B, SC-65, 3 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 420K
代理商: 2SK2745
2SC5358
2006-11-10
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5358
Power Amplifier Applications
High breakdown voltage: VCEO = 230 V
Complementary to 2SA1986
Suitable for use in 80-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
230
V
Collector-emitter voltage
VCEO
230
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
15
A
Base current
IB
1.5
A
Collector power dissipation
(Tc = 25°C)
PC
150
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.)
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