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參數(shù)資料
| 型號： | 2SK2777(2-10S1B) |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10S1B, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 446K |
| 代理商： | 2SK2777(2-10S1B) |
2SK2777
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK2777
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 0.9 (typ.)
High forward transfer admittance
: |Yfs| = 5.5 S (typ.)
Low leakage current : IDSS = 100 A (max) (VDS = 600 V)
Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
600
V
Draingate voltage (RGS = 20 k)
VDGR
600
V
Gatesource voltage
VGSS
±30
V
DC (Note 1)
ID
6
A
Drain current
Pulse (Note 1)
IDP
24
A
Drain power dissipation (Tc = 25°C)
PD
65
W
Single pulse avalanche energy
(Note 2)
EAS
345
mJ
Avalanche current
IAR
6
A
Repetitive avalanche energy (Note 3)
EAR
6.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
1.92
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 16.8 mH, RG = 25 , IAR =
6 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2777SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK2782 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 60V 20A 3PIN DP - Bulk |
| 2SK2782(Q) | 制造商:Toshiba 功能描述:Nch 60V 20A 0.055@10V DP Bulk |
| 2SK2782(TE16L1,Q) | 功能描述:MOSFET MOSFET N-Ch 60V 20A Rdson 0.055 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2782TE16L1 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 60V 20A 3PIN DP - Tape and Reel |
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