參數(shù)資料
型號(hào): 2SK2698
元件分類: JFETs
英文描述: 15 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-16C1B, 3 PIN
文件頁(yè)數(shù): 2/6頁(yè)
文件大小: 413K
代理商: 2SK2698
2SK2698
2004-07-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
A
Gatesource breakdown voltage
V (BR) GSS
IG = ±10 A, VDS = 0 V
±30
V
Drain cutoff current
IDSS
VDS = 500 V, VGS = 0 V
100
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 7.0 A
0.35
0.4
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 7.0 A
6
11
S
Input capacitance
Ciss
2600
Reverse transfer capacitance
Crss
280
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
880
pF
Rise time
tr
50
Turnon time
ton
85
Fall time
tf
65
Switching time
Turnoff time
toff
260
ns
Total gate charge (gatesource
plus gatedrain)
Qg
58
Gatesource charge
Qgs
36
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 15 A
22
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
15
A
Pulse drain reverse current
(Note 1)
IDRP
60
A
Forward voltage (diode)
VDSF
IDR = 15 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
400
ns
Reverse recovery charge
Qrr
IDR = 15 A, VGS = 0 V
dIDR / dt = 100 A / s
4.3
C
Marking
K2698
TOSHIBA
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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