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參數(shù)資料
| 型號(hào)： | 2SK2682 |
| 元件分類： | JFETs |
| 英文描述： | 13 A, 250 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FI |
| 封裝： | TO-220FI-LS, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 27K |
| 代理商： | 2SK2682 |
2SK2682
No.6783-2/4
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
ID -- VGS
Drain
Current,
I
D
--
A
Gate-to-Source Voltage, VGS -- V
6.0
ID -- VDS
Drain
Current,
I
D
--
A
Drain-to-Source Voltage, VDS -- V
IT02616
IT02617
02468
10
12
14
16
18
20
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
500
400
300
200
100
450
350
250
150
50
0
IT02618
--60
--40
--20
0
20
40
60
80
100
120
RDS(on) -- Tc
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
--
m
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
--
m
Case Temperature, Tc --
°C
500
400
300
200
100
0
160
140
IT02619
20
18
16
14
12
10
8
6
4
2
012345
0
20
18
16
14
12
10
8
6
4
2
0
VGS=3V
4V
5V
8V
6V
10V
--25
°C
25
°C
Tc=75
°C
VDS=10V
VGS=10V
ID=6A
Tc=25
°C
ID=6A
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Input Capacitance
Ciss
VDS=20V, f=1MHz
1290
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
300
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
125
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
22
ns
Rise Time
tr
See specified Test Circuit
66
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit
320
ns
Fall Time
tf
See specified Test Circuit
105
ns
Diode Forward Voltage
VSD
IS=12A, VGS=0
1.0
1.5
V
Diode Reverse Recovery Time
trr
IS=12A, di/dt=100A/
s
160
ns
Marking : K2682
Switching Time Test Circuit
PW=10
s
D.C.
≤1%
10V
0V
VIN
P.G
50
G
S
ID=6A
RL=16.7
VDD=100V
VOUT
2SK2682
VIN
D
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