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參數(shù)資料
| 型號(hào)： | 2SK2552 |
| 英文描述： | 2SK2552 Data Sheet | Data Sheet[01/2002] |
| 中文描述： | 2SK2552數(shù)據(jù)表|數(shù)據(jù)表[01/2002] |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 48K |
| 代理商： | 2SK2552 |
2SK2553
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±
10
μ
A
μ
A
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 25 A
V
GS
= 10 V
Note 1
I
D
= 25 A
V
GS
= 4 V
Note 1
I
D
= 25 A
V
DS
= 10 V
Note 1
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
10
V
GS(off)
R
DS(on)
1.0
—
2.0
V
Static drain to source on state
resistance
—
7
10
m
—
10
16
m
Forward transfer admittance
|y
fs
|
35
55
—
S
Input capacitance
Ciss
—
3550
—
pF
Output capacitance
Coss
—
1760
—
pF
Reverse transfer capacitance
Crss
—
500
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
35
—
ns
I
D
= 25 A
V
GS
= 10 V
R
L
= 1.2
Rise time
—
230
—
ns
Turn-off delay time
—
470
—
ns
Fall time
—
360
—
ns
Body to drain diode forward
voltage
—
0.85
—
V
I
F
= 50 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse Test
t
rr
—
135
—
ns
I
F
= 50 A, V
= 0
di
F
/ dt = 50 A /
μ
s
See characteristic curves of 2SK2529.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2552B | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
| 2SK2552B(T1-A) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK2552C | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:JUNCTION FIELD EFFECT TRANSISTOR |
| 2SK2553 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2553(L) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | TO-262VAR |
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