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參數(shù)資料
| 型號(hào)： | 2SK2552 |
| 英文描述： | 2SK2552 Data Sheet | Data Sheet[01/2002] |
| 中文描述： | 2SK2552數(shù)據(jù)表|數(shù)據(jù)表[01/2002] |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大小： | 48K |
| 代理商： | 2SK2552 |
2SK2553
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP
E
AR
Pch
Note 2
60
V
Gate to source voltage
±
20
V
Drain current
50
A
Drain peak current
Note 1
200
A
Body to drain diode reverse drain current
50
A
Avalanche current
Note 3
45
A
Avalanche energy
Note 3
174
mJ
Channel dissipation
75
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Notes
1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
≥
50
Tstg
–55 to +150
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SK2552B | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
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| 2SK2553 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2553(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | TO-262VAR |
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