參數(shù)資料
型號： 2SK2549
元件分類： 小信號晶體管
英文描述： 2000 mA, 16 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： LEAD FREE, 2-5K1B, 3 PIN
文件頁數(shù)： 2/6頁
文件大?。?/td> 378K
代理商： 2SK2549
2SK2549
2004-07-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±6.5 V, VDS = 0 V
—
±10
A
Drain cutoff current
IDSS
VDS = 16 V, VGS = 0 V
—
100
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
16
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 200 A
0.5
—
1.1
V
VGS = 2.5 V, ID = 0.5 A
—
0.29
0.38
Drainsource ON resistance
RDS (ON)
VGS = 4 V, ID = 1 A
—
0.22
0.29
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 1 A
1.5
3.0
—
S
Input capacitance
Ciss
—
260
—
Reverse transfer capacitance
Crss
—
34
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
103
—
pF
Rise time
tr
—
200
—
Turnon time
ton
—
250
—
Fall time
tf
—
300
—
Switching time
Turnoff time
toff
—
800
—
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
—
5.0
—
Gatesource charge
Qgs
—
3.2
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 16 V, VGS = 5 V, ID = 2 A
—
1.8
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
2
A
Pulse drain reverse current
(Note 1)
IDRP
—
6
A
Forward voltage (diode)
VDSF
IDR = 2 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
220
—
ns
Reverse recovered charge
Qrr
IDR = 2 A, VGS = 0 V
dIDR / dt = 50 A / s
—
0.32
—
C
相關(guān)PDF資料
PDF描述
2SK2553STL-E 50 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2570ZL-TL-E 0.2 A, 20 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2570ZL-TR-E 0.2 A, 20 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2586-E 60 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2591 8 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2549(TE12L) 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 16V 2A PW-MINI
2SK2549(TE12L,F) 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 16V 2A PW-MINI
2SK2549_06 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications
2SK2549_09 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DC−DC Converter, Relay Drive and Motor Drive Applications
2SK2550 功能描述:MOSFET N-CH 50V 45A TO-3PN RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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