參數(shù)資料
型號(hào): 2SK2549
元件分類: 小信號(hào)晶體管
英文描述: 2000 mA, 16 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: LEAD FREE, 2-5K1B, 3 PIN
文件頁數(shù): 1/6頁
文件大?。?/td> 378K
代理商: 2SK2549
2SK2549
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK2549
DCDC Converter, Relay Drive and Motor Drive
Applications
2.5-V gate drive
Low drainsource ON resistance
: RDS (ON) = 0.29 (typ.)
High forward transfer admittance
: |Yfs| = 3.0 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 16 V)
Enhancement mode
: Vth = 0.5~1.1 V (VDS = 10 V, ID = 200 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
16
V
Draingate voltage (RGS = 20 k)
VDGR
16
V
Gatesource voltage
VGSS
±8
V
DC
(Note 1)
ID
2
Drain current
Pulse (Note 1)
IDP
6
A
Drain power dissipation
PD
0.5
W
Drain power dissipation
(Note 2)
PD
1.5
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to
ambient
Rth (cha)
250
°C / W
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
2-5K1B
Weight: 0.05 g (typ.)
Z
7
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
相關(guān)PDF資料
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