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參數(shù)資料
| 型號(hào)： | 2SK2533 |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 250 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ZP, 2 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大小： | 42K |
| 代理商： | 2SK2533 |
2SK2533
No.8611-2/2
Continued from preceding page.
Symbol
Ratings
Parameter
Conditions
min
typ
max
Unit
Static Drain-to-Source On-State Resistance
RDS(on)
ID=6A, VGS=10V
200
270
mΩ
Input Capacitance
Ciss
VDS=20V, f=1MHz
1290
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
300
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
125
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
22
ns
Rise Time
tr
See specified Test Circuit.
66
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
320
ns
Fall Time
tf
See specified Test Circuit.
105
ns
Diode Forward Voltage
VSD
IS=13A, VGS=0V
1.0
1.5
V
Diode Reverse Recovery Time
trr
IS=13A, di / dt=100A / μs
160
ns
Package Dimensions
Switching Time Test Circuit
unit : mm
7002-001
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID=6A
RL=16.7Ω
VDD=100V
VOUT
2SK2533
VIN
--10V
0V
VIN
PS
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
6.2
7.8
8.2
0.2
0.4
4.2
1.0
5.08
2.54
8.4 10.0
1.2
0.3
0.6
0.7
7.8
5.2
6.2
10.0
6.0
2.5
1
2
3
1 : Gate
2 : Source
3 : Drain
SANYO : ZP
Note on usage : Since the 2SK2533 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
This catalog provides information as of February, 2010. Specifications and information herein are subject
to change without notice.
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