參數(shù)資料
型號: 2SK2529
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場效應(yīng)晶體管
文件頁數(shù): 6/10頁
文件大?。?/td> 51K
代理商: 2SK2529
2SK2529
6
Reverse Drain Current I (A)
R
Body to Drain Diode Reverse
Recovery Time
0.1
0.3
1
3
10
30
100
5000
2000
1000
200
500
100
20
10
50
5
di / dt = 50 A /
μ
s
V = 0, Ta = 25
°
C
0
10
20
30
40
50
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
10000
2000
5000
1000
100
200
500
V = 0
f = 1 MHz
Ciss
Coss
Crss
100
80
60
40
20
0
Gate Charge Qg (nc)
D
D
20
16
12
8
4
G
G
40
80
120
160
200
Dynamic Input Characteristics
0
V = 10 V
25 V
50 V
I = 50 A
V
GS
V
DS
V = 50 V
25 V
10 V
5000
Drain Current I (A)
S
Switching Characteristics
2000
1000
200
500
100
20
10
50
5
0.1
0.3
1
3
10
30
100
V = 10 V, V = 30 V
PW = 5 μs, duty < 1 %
tf
r
d(on)
t
d(off)
t
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參數(shù)描述
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