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參數(shù)資料
| 型號： | 2SK2529 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET |
| 中文描述： | 硅N溝道場效應(yīng)晶體管 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 51K |
| 代理商： | 2SK2529 |
2SK2529
4
40
30
20
10
0
C
50
100
150
200
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
500
200
100
20
50
10
2
1
5
0.5
0.1
0.3
1
3
10
30
100
Operation in
this area is
limited by R
DS(on)
Ta = 25 °C
10μs
100μ
1ms
DCOpeaion(T =25C
100
80
60
40
20
0
Drain to Source Voltage V (V)
D
D
Pulse Test
3.5 V
4 V
Typical Output Characteristics
6 V
5 V
10 V
3 V
V = 2.5 V
2
4
6
8
10
100
80
60
40
20
0
Gate to Source Voltage V (V)
D
D
V = 10 V
Pulse Test
Typical Transfer Characteristics
Tc = 75°C
25°C
–25°C
1
2
3
4
5
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| 2SK2539 | High-Frequency Amplifier,Analog Switch Applications N-Channel Junction Silicon FET(高頻放大器，模擬開關(guān)應(yīng)用的N溝道硅結(jié)型場效應(yīng)管) |
| 2SK2541 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2529-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2530 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK2530-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETN CH250V2ATO-251 |
| 2SK2531 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SK2532 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 10A I(D) |
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