- 您現(xiàn)在的位置：買賣IC網 > PDF目錄49998 > 2SK2398 45 A, 60 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | 2SK2398 |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 60 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-16C1B, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 436K |
| 代理商： | 2SK2398 |
2SK2398
2004-07-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
A
Drain cutoff current
IDSS
VDS = 60 V, VGS = 0 V
—
100
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
—
3.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 25 A
—
22
30
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 25 A
15
27
—
S
Input capacitance
Ciss
—
1800
—
Reverse transfer capacitance
Crss
—
350
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
900
—
pF
Rise time
tr
—
20
—
Turnon time
ton
—
30
—
Fall time
tf
—
40
—
Switching time
Turnoff time
toff
—
130
—
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
—
60
—
Gatesource charge
Qgs
—
40
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 48 V, VGS = 10 V, ID = 45 A
—
20
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
45
A
Pulse drain reverse current
(Note 1)
IDRP
—
180
A
Forward voltage (diode)
VDSF
IDR = 45 A, VGS = 0 V
—
1.8
V
Reverse recovery time
trr
—
60
—
ns
Reverse recovery charge
Qrr
IDR = 45 A, VGS = 0 V
dIDR / dt = 50 A / s
—
51
—
nC
Marking
K2398
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK2399(2-7J1B) | 5 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2400 | 5 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2406 | Si, SMALL SIGNAL, FET |
| 2SK2414-Z-E2 | 10000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2415-AZ | 8000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AB |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2398_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type DC−DC Converter and Motor Drive Applications |
| 2SK2398_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DC−DC Converter and Motor Drive Applications |
| 2SK2399 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) |
| 2SK2399(Q) | 功能描述:MOSFET N-Ch 100V 5A 0.17 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2399(TE16L1,NQ) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 100V 5A PW-MOLD |
發(fā)布緊急采購，3分鐘左右您將得到回復。