參數(shù)資料
型號(hào): 2SK2390
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場(chǎng)效應(yīng)晶體管(不適用溝道MOSFET的)
文件頁(yè)數(shù): 6/9頁(yè)
文件大?。?/td> 64K
代理商: 2SK2390
2SK2390
6
Reverse Drain Current I (A)
R
Body to Drain Diode Reverse
Recovery Time
0.1
0.3
1
3
10
30
100
500
200
100
20
50
10
5
di/dt = 50 A/
μ
s
V = 0, Ta = 25
°
C
0
10
20
30
40
50
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
10
1000
200
500
100
20
50
V = 0
f = 1 MHz
Ciss
Coss
Crss
100
80
60
40
20
0
Gate Charge Qg (nc)
D
D
20
16
12
8
4
0
G
G
Dynamic Input Characteristics
V = 10 V
25 V
50 V
V
GS
DS
V
I = 15 A
V = 50 V
25 V
10 V
8
16
24
32
40
Drain Current I (A)
S
Switching Characteristics
tf
r
d(on)
t
d(off)
t
500
200
100
20
50
10
5
0.2
0.5
1
2
5
10
20
V = 10 V, V = 30 V
PW = 5 μs, duty < 1 %
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