參數(shù)資料
型號: 2SK2390
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場效應(yīng)晶體管(不適用溝道MOSFET的)
文件頁數(shù): 5/9頁
文件大?。?/td> 64K
代理商: 2SK2390
2SK2390
5
2.0
1.6
1.2
0.8
0.4
0
Gate to Source Voltage V (V)
D
D
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2
4
6
8
10
Pulse Test
I = 15 A
10 A
5 A
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
1
2
5
10
20
50
100
0.2
0.5
0.1
0.02
0.01
0.05
V = 4 V
10 V
0.5
0.4
0.3
0.2
0.1
–40
0
40
80
120
160
Case Temperature Tc (°C)
0
R
D
S
Pulse Test
Static Drain to Source on State Resistance
vs. Temperature
I = 15 A
V = 4 V
10 V
5 A
10 A
5 A, 10 A, 15 A
F
Drain Current I (A)
Forward Transfer Admittance vs.
Drain Current
20
10
2
5
1
0.2
0.5
0.2
0.5
1
2
5
10
20
25 °C
Tc = –25 °C
75 °C
V = 10 V
Pulse Test
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