- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄371546 > 2SK2383 (PANASONIC CORP) Silicon N-Channel Power F-MOS FET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK2383 |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | Silicon N-Channel Power F-MOS FET |
| 中文描述： | 13 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TOP3E, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 43K |
| 代理商： | 2SK2383 |
1
Power F-MOS FETs
2SK2383
Silicon N-Channel Power F-MOS FET
I
Features
G
Avalanche energy capacity guaranteed
G
High-speed switching
G
Low ON-resistance
G
No secondary breakdown
unit: mm
I
Applications
G
Contactless relay
G
Diving circuit for a solenoid
G
Driving circuit for a motor
G
Control equipment
G
Switching power supply
1: Gate
2: Drain
3: Source
TOP-3E Package
I
Electrical Characteristics
(T
C
= 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
Conditions
V
DS
= 400V, V
GS
= 0
V
GS
= ±30V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 25V, I
D
= 1mA
V
GS
= 10V, I
D
= 7A
V
DS
= 25V, I
D
= 7A
I
DR
= 13A, V
GS
= 0
V
DS
= 20V, V
GS
= 0, f = 1MHz
V
DD
= 150V, I
D
= 7A
V
GS
= 10V, R
L
= 21.4
min
500
1
5
typ
0.45
8
1700
300
120
30
70
90
210
max
100
±1
5
0.6
1.7
1.25
41.67
Unit
μ
A
μ
A
V
V
S
V
pF
pF
pF
ns
ns
ns
ns
°C/W
°C/W
I
Absolute Maximum Ratings
(T
C
= 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25°C
Ta = 25°C
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
500
±30
±13
±26
170
100
3
150
55 to +150
Unit
V
V
A
A
mJ
W
°C
°C
*
L = 2mH, I
L
= 13A, 1 pulse
15.5±0.5
2
2
2
1
3
5
2
0
2
2
1
3.0±0.3
φ
3.2±0.1
4
5.45±0.3
1
2
3
5.45±0.3
1.1±0.1
2.0±0.2
4.0
5
5
5
5
5
5
0.7±0.1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2385 | High Speed,High Current Switching Application N Channel MOSFET(高速大電流轉(zhuǎn)換用 N溝道 MOS場(chǎng)效應(yīng)管) |
| 2SK2391 | High Speed, High Current Switching Application N Channel MOSFET(高速大電流轉(zhuǎn)換用的N溝道MOS場(chǎng)效應(yīng)管) |
| 2SK2397-01MR | N-channel MOS-FET |
| 2SK2398 | High Speed, High Voltage Switching Application N Channel MOSFET(高速高電壓轉(zhuǎn)換用的N溝道MOS場(chǎng)效應(yīng)管) |
| 2SK2399 | High Speed,High Current Switching Application N Channel MOSFET(高速大電流轉(zhuǎn)換用 N溝道 MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2385 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 60V 36A 3PIN TO-220(NIS) - Rail/Tube |
| 2SK2385(F) | 制造商:Toshiba 功能描述:Nch 60V 36A 0.03@10V 制造商:Toshiba 功能描述:Nch 60V 36A 0.03@10V Bulk |
| 2SK2385(F,T) | 功能描述:MOSFET MOSFET N-Ch, 60V, 36A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2388 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3.5A I(D) | SOT-186 |
| 2SK239 | 制造商:Renesas Electronics Corporation 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。