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參數(shù)資料
| 型號(hào)： | 2SK2372 |
| 廠商： | NEC Corp. |
| 元件分類(lèi)： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開(kāi)關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí) |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 112K |
| 代理商： | 2SK2372 |
MOS FIELD EFFECT TRANSISTORS
2SK2371/2SK2372
DESCRIPTION
The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
Low On-Resistance
2SK2367: R
DS(ON)
= 0.25
(V
GS
= 13 V, I
D
= 10 A)
2SK2368: R
DS(ON)
= 0.27
(V
GS
= 13 V, I
D
= 10 A)
Low C
iss
C
iss
= 3600 pF TYP.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
(2SK2371/2SK2372)
V
DSS
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
C
= 25
°
C)
Total Power Dissipation (T
a
= 25
°
C)
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
* PW
≤
10
μ
s, Duty Cycle
≤
1 %
** Starting T
ch
= 25
°
C, R
G
= 25
, V
GS
= 20 V
→
0
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device is actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
450/500
±
30
±
25
±
100
160
3.0
150
–55 ~ +150
25
446
V
V
A
A
W
W
°
C
°
C
A
mJ
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
1995
DATA SHEET
Document No.
(O.D. No.
Date Published
Printed in Japan
TC-2505
TC-8064
January 1995 P
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Body
Diode
Source
Drain
Gate
3
3.2 ± 0.2
4.7 MAX.
1.5
7
2.8 ± 0.1
0.6 ± 0.1
1.0 ± 0.2
5.45
2.2 ± 0.2
5.45
15.7 MAX.
4
1
2
4
2
3
6
1
1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
PACKAGE DIMENSIONS
(in millimeters)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2378 | Ultrahigh-Speed Switching Applications |
| 2SK2390 | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 2SK2406 | Ultrahigh-Speed Switching, Motor Driver Applications |
| 2SK2408 | Silicon N-Channel MOS FET |
| 2SK2409 | Switching N-channel power MOS FET industrial use |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2372-A | 制造商:Renesas Electronics 功能描述:Nch 500V 25A 270m@10V TO3P Bulk 制造商:Renesas Electronics Corporation 功能描述:2SK2372-A Series 500 V 0.27 Ohm 160 W 95 nC Switching Power Mosfet - TO-3P |
| 2SK2373 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK2373ZE-TL-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2373ZE-TR-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2374 | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
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