參數(shù)資料
型號(hào): 2SK2370
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級(jí)
文件頁數(shù): 5/8頁
文件大小: 113K
代理商: 2SK2370
2SK2369/2SK2370
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0.8
T
ch
- Channel Temperature - (C)
R
D
)
REVERSE RECOVERY TIME vs.
REVERSE DRAIN CURRENT
1.0
100
I
F
- Forward Current - (A)
t
r
0.1
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - (V)
I
S
1.5
100
10
1
0.1
0.01
1.0
0.5
0
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - (V)
C
i
,
o
,
r
1.0
I
D
- Drain Current - (A)
10
100
1 000
t
d
,
r
,
d
,
f
100
0.1
10
1.0
V
DD
= 150 V
V
GS
= 10 V
R
in
= 10
SWITCHING CHARACTERISTICS
t
r
t
f
t
d (off)
t
d (on)
100
1 000
10 000
1 000
100
10
C
rss
10
1.0
0.1
0.01
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
600
500
400
300
200
100
0
d
i
/d
t
= 50 A/ s
V
GS
= 0 V
10
25
–25
–50
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
50
75 100 125 150 175
V
= 10 V
Pulsed
I
D
= 20 A
10 A
V
GS
= 0 V
V
GS
= 10 V
I
D
= 20 A
Q
g
- Gate Charge - (nC)
V
D
0
60
70
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
G
20
18
16
14
12
10
8
6
4
2
0
V
DD
= 400 V
250 V
125 V
V
GS
10
20
30
40
50
V
DS
500
400
300
200
100
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參數(shù)描述
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