參數(shù)資料
型號(hào): 2SK2341
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí)
文件頁(yè)數(shù): 4/8頁(yè)
文件大小: 97K
代理商: 2SK2341
2SK2341
4
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
2.0
PW - Pulse Width - s
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
y
V
GS
- Gate to Source Voltage - V
R
D
-
GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE
T
ch
- Channel Temperature - °C
V
G
-
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
–50
0
50
100
150
5.0
4.0
3.0
2.0
1.0
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
t
(
10
100
1 m
10 m
100 m
1
10
100
1000
1000
100
10
1
0.1
0.01
0.001
T
C
= 25 °C
Single Pulsed
R
th (ch-c)
= 3.57 °C/W
R
th (ch-a)
= 62.5 °C/W
10
0.1
1.0
1.0
10
100
T
A
= –25 °C
25 °C
75 °C
125 °C
V
DS
= 10 V
Pulsed
20
30
0
10
1.0
Pulsed
I
D
= 16 A
8.0 A
3.2 A
1.5
0.5
1.0
0
0.1
10
100
1.0
V
GS
= 10 V
Pulsed
V
DS
= 10 V
I
D
= 1 mA
μ
μ
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