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參數(shù)資料
| 型號： | 2SK2341 |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關(guān)功率場效應晶體管 工業(yè)級 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 97K |
| 代理商： | 2SK2341 |
2SK2341
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain to Source On-state Resistance
R
DS(on)
0.21
0.26
V
GS
= 10 V, I
D
= 6 A
Gate to Source Cutoff Voltage
V
GS(off)
2.0
4.0
V
V
DS
= 10 V, I
D
= 1 mA
Forward Transfer Admittance
y
fs
3.0
S
V
DS
= 10 V, I
D
= 6 A
Drain Leakage Current
I
DSS
100
μ
A
V
DS
= 250V, V
GS
= 0
Gate to Source Leakage Current
I
GSS
±
100
nA
V
GS
=
±
30 V, V
DS
= 0
Input Capacitance
C
iss
1090
pF
V
DS
= 10 V
Output Capacitance
C
oss
420
pF
V
GS
= 0
Reverse Transfer Capacitance
C
rss
80
pF
f = 1 MHz
Turn-On Delay Time
t
d(on)
20
ns
V
GS
= 10 V
Rise Time
t
r
20
ns
V
DD
= 150 V
Turn-Off Delay Time
t
d(off)
50
ns
I
D
= 6 A, R
G
= 10
Fall Time
t
f
15
ns
R
L
= 25
Total Gate Charge
Q
G
33
nC
V
GS
= 10 V
Gate to Source Charge
Q
GS
6.0
nC
I
D
= 11 A
Gate to Drain Charge
Q
GD
13
nC
V
DD
= 200 V
Diode Forward Voltage
V
F(S-D)
1.0
V
I
F
= 11 A, V
GS
= 0
Reverse Recovery Time
t
rr
220
ns
1
F
= 11 A
Reverse Recovery Charge
Q
rr
1.0
μ
C
di/dt = 50 A/
μ
s
Test Circuit 1 : Avalanche Capability
Test Circuit 2 : Switching Time
V
GS
= 20
→
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
PG.
R
G
= 10
D.U.T.
R
L
V
DD
R
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ
= 1 s
Duty Cycle
≤
1%
V
GS
Wave
Form
I
D
Wave
Form
V
GS
I
D
10 %
10 %
0
0
90 %
90 %
90 %
10 %
V
GS (on)
I
D
t
on
t
off
t
d(on)
t
r
t
d (off)
t
f
τ
Test Circuit 3 : Gate Charge
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
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PDF描述 |
|---|---|
| 2SK2345 | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 2SK2346 | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 2SK2347 | High-Voltage, High-Speed Switching Applications |
| 2SK2348 | High-Voltage, High-Speed Switching Applications |
| 2SK2349 | High-Voltage, High-Speed Switching Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2341-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,250V,11A,0.21ohm,isoTO-220 制造商:Renesas 功能描述:Trans MOSFET N-CH 250V 11A 3-Pin(3+Tab) TO-220 Isolated |
| 2SK2345 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 6A I(D) | TO-220FN |
| 2SK2346 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-220FN |
| 2SK2347 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Voltage, High-Speed Switching Applications |
| 2SK2348 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Voltage, High-Speed Switching Applications |
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