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參數(shù)資料
| 型號(hào)： | 2SK2084L-E |
| 元件分類： | JFETs |
| 英文描述： | 7 A, 20 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁(yè)數(shù)： | 7/10頁(yè) |
| 文件大?。?/td> | 101K |
| 代理商： | 2SK2084L-E |
2SK2084(L), 2SK2084(S)
Rev.2.00 Sep 07, 2005 page 4 of 7
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State
Resistance vs. Temperature
Drain Current ID (A)
Forward
Transfer
Admittance
y
fs
(S)
Forward Transfer Admittance
vs. Drain Current
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Body to Drain Diode Reverse
Recovery Time
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
Gate
to
Source
Voltage
V
GS
(V)
Drain Current ID (A)
Switching
Time
t
(ns)
Switching Characteristics
0.20
0.16
0.12
0.08
0.04
–40
0
40
80
120
160
0
Pulse Test
VGS = 4 V
10 V
5 A
1 A
2 A
1 A
2 A
5 A
0.1
20
10
5
2
1
0.5
0.2
0.5
1
2
5
10
Tc = –25
°C
25
°C
75
°C
VDS = 10 V
Pulse Test
0.1
0.2
0.5
1
2
5
10
200
100
20
10
50
di / dt = 20 A /
s
VGS = 0, Ta = 25°C
10000
1000
100
10
04
8
12
16
20
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
50
40
30
20
10
0
8
16
24
32
40
20
16
12
8
4
0
VGS
VDS
VDD = 20 V
10 V
5 V
VDD = 20 V
10 V
5 V
0.1
0.2
0.5
1
2
5
10
200
100
20
10
50
VGS = 10 V
VDD = 20 V
PW = 5
s
duty < 1 %
tf
tr
td(on)
td(off)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2084S | 制造商:Hitachi 功能描述: |
| 2SK2084STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2085 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK2085(TZ-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK2089 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5A I(D) | TO-251VAR |
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