- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄31712 > 2SK2084L-E 7 A, 20 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | 2SK2084L-E |
| 元件分類： | JFETs |
| 英文描述： | 7 A, 20 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 101K |
| 代理商： | 2SK2084L-E |
2SK2084(L), 2SK2084(S)
Rev.2.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
20
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
7
A
Drain peak current
ID(pulse)*
1
28
A
Body to drain diode reverse drain current
IDR
7
A
Channel dissipation
Pch*
2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤10 s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
20
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
100
A
VDS = 16 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
ID = 1 mA, VDS = 10 V
—
0.04
0.053
ID = 4 A, VGS = 10 V*
3
Static drain to source on state
resistance
RDS(on)
—
0.058
0.075
ID = 4 A, VGS = 4 V*
3
Forward transfer admittance
|yfs|
5
9
—
S
ID = 4 A, VDS = 10 V*
3
Input capacitance
Ciss
—
800
—
pF
Output capacitance
Coss
—
680
—
pF
Reverse transfer capacitance
Crss
—
165
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
15
—
ns
Rise time
tr
—
60
—
ns
Turn-off delay time
td(off)
—
100
—
ns
Fall time
tf
—
80
—
ns
ID = 4 A, VGS = 10 V,
RL = 5
Body to drain diode forward voltage
VDF
—
0.9
—
V
IF = 7 A, VGS = 0
Body to drain diode reverse recovery
time
trr
—
80
—
ns
IF = 7 A, VGS = 0,
diF / dt = 20 A /
s
Note:
3. Pulse Test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2094TL | 2 A, 60 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2094 | 2 A, 60 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2118 | 5 A, 600 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2229TP | 5 A, 60 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SJ377TE16L | 5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2084S | 制造商:Hitachi 功能描述: |
| 2SK2084STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2085 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK2085(TZ-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK2089 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5A I(D) | TO-251VAR |
發(fā)布緊急采購，3分鐘左右您將得到回復。