參數(shù)資料
型號(hào): 2SK2070
廠商: NEC Corp.
英文描述: N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
中文描述: N溝道場(chǎng)效應(yīng)晶體管的高速開(kāi)關(guān)
文件頁(yè)數(shù): 4/6頁(yè)
文件大?。?/td> 59K
代理商: 2SK2070
2SK2070
4
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.7
V
GS
= 10 V
0.01
0.03
1
0.3
3
10
I
D
- Drain Current - A
0.2
0.4
0.5
R
D
0
0.1
0.1
0.3
0.6
T
A
= 75 C
25 C
–25 C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0.5
5
10
15
20
V
GS
- Gate to Source Voltage - V
0.2
0.4
R
D
0
0.1
0.3
I
D
= 2 A
1 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
0.8
1
1.2
V
SD
- Source to Drain Voltage - V
0.001
0.01
1
10
I
S
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
1
2
20
10
50
100
V
DS
- Drain to Source Voltage - V
100
200
1000
C
i
,
r
,
o
10
5
20
50
500
0.1
0.6
0.4
0.2
V
GS
= 0
f = 1 MHz
C
rss
C
iss
SWITCHING CHARACTERISTICS
0.1
0.2
2
1
5
10
I
D
- Drain Current - A
10
20
100
t
d
,
r
,
d
,
f
1
0.5
2
5
50
t
d(off)
C
oss
t
d(on)
t
f
t
f
相關(guān)PDF資料
PDF描述
2SK2074 High-Frequency Low-Noise Amp Applications
2SK2075 Silicon N-Channel MOS FET
2SK2076 Impedance Converter Applications
2SK2083 Very High-Speed Switching Applications
2SK2084 Silicon N-Channel MOS FET
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