參數(shù)資料
型號: 2SK1911
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場效應(yīng)晶體管(不適用溝道MOSFET的)
文件頁數(shù): 3/9頁
文件大小: 65K
代理商: 2SK1911
2SK1911
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
V
I
G
=
±
200
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
±
10
250
μ
A
μ
A
V
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 50 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 20 A
V
GS
= 10 V*
I
D
= 20 A
V
GS
= 4 V*
I
D
= 20 A
V
DS
= 10 V*
V
DS
= 10 V
V
= 0
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
V
GS(off)
R
DS(on)
1.0
2.25
Static drain to source on state
resistance
0.018
0.022
1
0.023
0.028
1
Forward transfer admittance
|y
fs
|
22
35
S
1
Input capacitance
Ciss
3530
pF
Output capacitance
Coss
1480
pF
Reverse transfer capacitance
Crss
300
pF
Turn-on delay time
t
d(on)
33
ns
I
D
= 20 A
V
GS
= 10 V
R
L
= 1.5
Rise time
t
r
t
d(off)
t
f
V
DF
155
ns
Turn-off delay time
450
ns
Fall time
220
ns
Body to drain diode forward
voltage
1.2
V
I
F
= 40 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse Test
t
rr
120
ns
I
= 40 A, V
= 0,
diF / dt = 50 A /
μ
s
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