參數(shù)資料
型號(hào): 2SK1836
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場(chǎng)效應(yīng)晶體管(不適用溝道MOSFET的)
文件頁(yè)數(shù): 6/9頁(yè)
文件大小: 60K
代理商: 2SK1836
2SK1836, 2SK1837
6
Reverse Drain Current I (A)
R
0.5
1
2
5
10
20
50
10
20
50
100
200
500
1000
di / dt = 100 A / s
V = 0, Ta = 25°C
Body to Drain Diode Reverse
Recovry Time
Drain to Source Voltage V (V)
C
0
10
20
30
40
50
10
100
1000
10000
V = 0
f = 1 MHz
Typical Capacitance
vs. Drain to Source Voltage
Ciss
Ciss
Crss
Gate Charge g (nc)
D
G
D
G
Q
0
80
160
240
320
400
100
200
300
400
500
0
4
8
12
16
20
250 V
400 V
250 V
100 V
V
DS
GS
V = 100 V
V = 400 V
DD
V
I = 50 A
Dynamic Input Characteristics
V = 10 V,V 30 V
PW = 2 s, duty 1 %
Drain Current I (A)
S
0.5
1
2
5
10
20
50
50
100
200
500
1000
2000
5000
td (off)
tf
tr
td (on)
Switching Characteristics
相關(guān)PDF資料
PDF描述
2SK1837 Silicon N-Channel MOS FET(N溝道MOSFET)
2SK1838 Silicon N-Channel MOS FET(N溝道MOSFET)
2SK1850 Switching N-channel power MOS FET industrial use
2SK1851 Switching N-channel power MOS FET industrial use
2SK1852 Switching N-channel power MOS FET industrial use
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