參數(shù)資料
型號(hào): 2SK1761
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場效應(yīng)晶體管(不適用溝道MOSFET的)
文件頁數(shù): 5/8頁
文件大?。?/td> 53K
代理商: 2SK1761
2SK1761
5
Gate to Source Voltage V (V)
D
0
4
8
12
16
20
1
2
4
3
5
D
Pulse Test
10 A
5 A
I = 2 A
D
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current I (A)
S
R
D
0.5
1
2
5
10
20
50
0.05
0.1
0.2
0.5
1
2
5
Pulse Test
15 V
V = 10 V
Static Drain to Source on State
Resistance vs. Drain Current
Case Temperature Tc (°C)
S
R
D
– 40
0
40
80
120
160
0
0.2
0.4
0.6
0.8
1.0
2 A
5 A
Pulse Test
V = 10 V
GS
I = 10 A
D
Static Drain to Source on State
Resistance vs. Temperature
Drain Current I (A)
F
f
Tc = –25°C
25°C
75°C
V = 10 V
Pulse Test
0.1
0.2
0.5
1
2
5
10
0.5
1
2
5
10
20
50
Forward Transfer Admittance
vs. Drain Current
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