參數(shù)資料
型號(hào)： 2SK1698
廠商： Hitachi,Ltd.
英文描述： Silicon N-Channel MOS FET
中文描述： 硅N溝道場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 3/6頁(yè)
文件大?。?/td> 29K
代理商： 2SK1698
2SK1698
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
100
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±
10
μ
A
μ
A
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 80 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 0.2 A, V
GS
= 10 V *
1
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
50
V
GS(off)
R
DS(on)
1.0
—
2.0
V
Static drain to source on state
resistance
—
3.5
4.5
—
4.5
6.5
I
D
= 0.2 A, V
GS
= 4 V *
1
I
D
= 0.2 A, V
DS
= 10 V *
1
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
Forward transfer admittance
|y
fs
|
Ciss
0.22
0.35
—
S
Input capacitance
—
35
—
pF
Output capacitance
Coss
—
14
—
pF
Reverse transfer capacitance
Crss
—
3.5
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
2
—
ns
I
D
= 0.2 A, V
GS
= 10 V,
R
L
= 150
Rise time
—
4
—
ns
Turn-off delay time
—
17
—
ns
Fall time
—
15
—
ns
Body to drain diode forward
voltage
—
0.9
—
V
I
F
= 0.3 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
rr
—
80
—
ns
I
F
= 0.3 A, V
GS
= 0,
di
F
/dt = 50 A/
μ
s
See characteristic curve of 2SK1337.
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