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參數(shù)資料
| 型號(hào)： | 2SK1629-E |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 |
| 封裝： | TO-3PL, 3 PIN |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 105K |
| 代理商： | 2SK1629-E |
2SK1628, 2SK1629
REJ03G0960-0400 Rev.4.00 May 13, 2009
Page 4 of 6
1.0
0.8
0.6
0.4
0.2
0
40
80
120
160
Case Temperature TC (°C)
–40
Static Drain to Source on State
Resistance vs. Temperature
VGS = 10 V
Pulse Test
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
10 A
ID = 20 A
5 A
Forward Transfer Admittance
vs. Drain Current
50
20
10
5
0.5
0.2
0.5
1.0
5
10
20
Drain Current ID (A)
1.0
2
75
°C
Forward
Transfer
Admittance
y
fs
(S)
TC = 25°C
VDS = 20 V
Pulse Test
–25
°C
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/
s, Ta = 25°C
VGS = 0
Pulse Test
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
5,000
2,000
500
200
100
50
1,000
0.5
1.0
2
5
10
20
50
Typical Capacitance
vs. Drain to Source Voltage
100
010
20
30
40
50
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Coss
Ciss
Crss
10
VGS = 0
f = 1 MHz
1,000
10,000
Dynamic Input Characteristics
500
400
300
200
100
0
40
80
120
160
200
Gate Charge Qg (nC)
Drain
to
Source
Voltage
V
DS
(V)
20
16
12
8
4
0
Gate
to
Source
Voltage
V
GS
(V)
VDD = 100 V
V DD = 400 V
250 V
VDS
ID = 20 A
400 V
VGS
100 V
Switching Characteristics
500
100
50
20
10
5
200
Switching
Time
t
(ns)
0.5
1.0
2
5
10
20
50
Drain Current ID (A)
VGS = 10 V VDD = 30 V
PW = 2
s, duty < 1%
td (off)
tr
tf
td (on)
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