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參數(shù)資料
| 型號： | 2SK1629-E |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 |
| 封裝： | TO-3PL, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 105K |
| 代理商： | 2SK1629-E |
2SK1628, 2SK1629
REJ03G0960-0400 Rev.4.00 May 13, 2009
Page 3 of 6
Main Characteristics
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
300
0
100
200
050
100
150
500
200
100
20
50
10
2
5
0.5
1
3
10
30
100
300
1000
50
0
10
20
30
40
010
20
30
40
50
5 V
VGS = 4 V
20
0
4
8
12
16
02
4
6
8
10
25°C
Operation in
this area is
limited by RDS (on)
Pulse Test
VDS = 20 V
Pulse Test
Ta = 25°C
2SK1629
2SK1628
Gate to Source Voltage
VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current
ID (A)
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
10
0
2
4
6
8
04
8
12
16
20
10 A
5 A
ID = 20 A
12
5
10
20
50
100
5
2
1
0.2
0.5
0.1
0.05
15 V
VGS = 10 V
Pulse Test
10
s
1 ms
PW
= 10
ms
(1
S
hot)
DC
Operation
(Tc
=
25°C)
100
s
7 V
–25°C
10 V
Tc = 75°C
6 V
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