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參數(shù)資料
| 型號： | 2SK1405 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅N溝道場效應(yīng)晶體管（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 2SK1405 |
2SK1405
4
60
40
20
0
50
100
150
Case Temperature T
C
(°C)
C
Power vs. Temperature Derating
100
10
1
Drain to Source Voltage V
DS
(V)
D
D
Maximum Safe Operation Area
30
3
0.3
1
0.1
3
10
30
100
300
1,000
0.05
0.03
Ta = 25°C
100
μ
s
PW=10ms(1Sho puse
DCOpeaion(T
C
=25°C
Opeaioninthsaea
islmtedbyR
DS(on
10
μ
s
20
8
20
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
16
4
4
12
16
0
8
12
D
D
V
GS
= 4 V
Pulse Test
4.5 V
5 V
6 V
10 V
20
4
10
Gate to Source Voltage V
GS
(V)
D
D
Typical Transfer Characteristics
16
4
2
6
8
0
8
12
V
DS
= 10 V
Pulse Test
T
C
= 75°C
25°C
–25°C
10
4
10
Gate to Source Voltage V
GS
(V)
D
D
8
2
2
6
8
0
4
6
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Pulse Test
I
D
= 5 A
20 A
10 A
5
Drain Current I
D
(A)
S
R
D
)
2
0.2
0.1
0.5
1
Static Drain to Source on State
Resistance vs. Drain Current
Pulse Test
0.05
10
V
GS
= 10, 15 V
1
2
5
20
50
100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1412 | High-Voltage High-Speed Switching Applications |
| 2SK1412LS | Ultrahigh-Speed Switching Applications |
| 2SK1413 | High-Voltage High-Speed Switching Applications |
| 2SK1414 | High-Voltage High-Speed Switching Applications |
| 2SK1416 | Very High-Speed Switching Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1405-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1406 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SK1410-202 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1412 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Voltage High-Speed Switching Applications |
| 2SK1412LS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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