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參數資料
| 型號： | 2SK1405 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅N溝道場效應晶體管（不適用溝道MOSFET的） |
| 文件頁數： | 3/7頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 2SK1405 |
2SK1405
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
600
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
30
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±
10
μ
A
μ
A
V
GS
=
±
25 V, V
DS
= 0
V
DS
= 500 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 8 A, V
GS
= 10 V *
1
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
250
V
GS(off)
R
DS(on)
2.0
—
3.0
V
Static drain to source on state
resistance
—
0.35
0.50
Forward transfer admittance
|yfs|
9
14
—
S
I
D
= 8 A, V
DS
= 10 V *
1
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
Input capacitance
Ciss
—
3150
—
pF
Output capacitance
Coss
—
780
—
pF
Reverse transfer capacitance
Crss
—
110
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
35
—
ns
I
D
= 8 A, V
GS
= 10 V,
R
L
= 3.75
Rise time
—
120
—
ns
Turn-off delay time
—
240
—
ns
Fall time
—
100
—
ns
Body to drain diode forward
voltage
—
1.0
—
V
I
F
= 15 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
rr
—
140
—
ns
I
F
= 15 A, V
= 0,
di
F
/dt = 100 A/
μ
s
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PDF描述 |
|---|---|
| 2SK1412 | High-Voltage High-Speed Switching Applications |
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| 2SK1414 | High-Voltage High-Speed Switching Applications |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK1405-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1406 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SK1410-202 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1412 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Voltage High-Speed Switching Applications |
| 2SK1412LS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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