參數(shù)資料
型號: 2SK1404
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場效應(yīng)晶體管(不適用溝道MOSFET的)
文件頁數(shù): 6/8頁
文件大?。?/td> 58K
代理商: 2SK1404
2SK1404
6
1,000
0.1
Reverse Drain Current I
DR
(A)
2
500
20
0.2
1
0.05
100
200
10
0.5
R
Body to Drain Diode Reverse
Recovery Time
di/dt = 50 A/
μ
s, Ta = 25°C
V
GS
= 0
Pulse Test
50
5
1,000
20
50
Drain to Source Voltage V
DS
(V)
C
10
30
40
Typical Capacitance vs.
Drain to Source Voltage
0
100
V
= 0
f = 1 MHz
Crss
Coss
Ciss
10,000
10
1,000
16
40
D
D
Dynamic Input Characteristics
800
200
8
24
32
400
600
20
16
4
0
8
12
G
G
0
V
GS
V
DS
V
DD
= 400 V
250 V
100 V
I
D
= 5 A
Gate Charge Qg (nc)
250 V
400 V
V
DD
= 100 V
500
Drain Current I
D
(A)
S 200
5
50
100
10
Switching Characteristics
t
d (off)
0.2
0.5
0.1
1
t
f
t
r
t
d (on)
V
GS
= 10 V, V
DD
=
PW = 2
μ
s, duty < 0.1%
2
10
5
相關(guān)PDF資料
PDF描述
2SK1405 Silicon N-Channel MOS FET(N溝道MOSFET)
2SK1412 High-Voltage High-Speed Switching Applications
2SK1412LS Ultrahigh-Speed Switching Applications
2SK1413 High-Voltage High-Speed Switching Applications
2SK1414 High-Voltage High-Speed Switching Applications
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