參數(shù)資料
型號: 2SK1404
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場效應(yīng)晶體管(不適用溝道MOSFET的)
文件頁數(shù): 3/8頁
文件大?。?/td> 58K
代理商: 2SK1404
2SK1404
3
Electrical Characteristics
(Ta = 25
q
C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
600
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
r
30
V
I
G
=
r
100
P
A, V
DS
= 0
Gate to source leak current
I
GSS
r
10
P
A
V
GS
=
r
25 V, V
DS
= 0
V
DS
= 500 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 2.5 A, V
GS
= 10 V *
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
250
P
A
V
GS(off)
R
DS(on)
2.0
3.0
V
Static drain to source on state
resistance
1.1
1.5
:
1
Forward transfer admittance
|yfs|
3.0
5.0
S
I
D
= 2.5 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
1
Input capacitance
Ciss
1000
pF
Output capacitance
Coss
250
pF
Reverse transfer capacitance
Crss
45
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
12
ns
I
D
= 2.5 A, V
GS
= 10 V,
R
L
= 12
:
Rise time
45
ns
Turn-off delay time
105
ns
Fall time
55
ns
Body to drain diode forward
voltage
0.9
V
I
F
= 5 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
rr
500
ns
I
F
= 5 A, V
= 0,
di
F
/dt = 100 A/
P
s
相關(guān)PDF資料
PDF描述
2SK1405 Silicon N-Channel MOS FET(N溝道MOSFET)
2SK1412 High-Voltage High-Speed Switching Applications
2SK1412LS Ultrahigh-Speed Switching Applications
2SK1413 High-Voltage High-Speed Switching Applications
2SK1414 High-Voltage High-Speed Switching Applications
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