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參數資料
| 型號： | 2SK1399 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 中文描述： | N溝道MOS場效應晶體管高速開關 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 46K |
| 代理商： | 2SK1399 |
Data Sheet D14770EJ2V0DS00
3
2SK1399
TYPICAL CHARACTERISTICS (T
A
= 25°C)
0
20
40
60
80
100
120 140
160
0
40
20
80
60
100
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
c
- Case Temperature -
C
d
T
A
- Ambient Temperature -
C
P
T
0
0
120
30
60
90
150
210
180
240
50
100
150
200
250
300
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
0.5
2
1
1.5
20
60
40
0
0
80
100
2.5 V
V
GS
= 4.5 V
4.0 V
Pulse measurement
TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
7
8
5
6
3
4
0
1
2
100
10
1
0.1
0.01
V
= 3.0 V
Pulse measurement
T
A
= 150
C
75
C
25
C
–25
C
150
2.0
1.5
1.0
0.5
50
100
0
T
ch
- Channel Temperature -
C
V
G
V
DS
= 3.0 V
I
D
= 1
μ
A
GATE TO SOURCE CUT-OFF VOLTAGE
vs. CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
20
50 100 200
500 1000
I
D
- Drain Current - mA
|
f
100
200
500
1000
10
20
50
1
5
V
= 5.0 V
f = 1 kHz
#
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相關代理商/技術參數 |
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| 2SK1399-A | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
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