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參數(shù)資料
| 型號： | 2SK1399 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 中文描述： | N溝道MOS場效應(yīng)晶體管高速開關(guān) |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 46K |
| 代理商： | 2SK1399 |
Data Sheet D14770EJ2V0DS00
2
2SK1399
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-off Current
I
DSS
V
DS
= 50
V, V
GS
= 0
V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
= ±7.0 V, V
DS
= 0
V
±5.0
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 3.0
V, I
D
= 1.0
μ
A
0.9
1.2
1.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 3.0
V, I
D
= 10 mA
20
38
mS
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 2.5
V, I
D
= 10 mA
22
40
R
DS(on)2
V
GS
= 4.0
V, I
D
= 10
mA
14
20
Input Capacitance
C
iss
V
DS
= 3.0
V
8
pF
Output Capacitance
C
oss
V
GS
= 0
V
7
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
3
pF
Turn-on Delay Time
t
d(on)
V
DD
= 3.0
V
15
ns
Rise Time
t
r
I
D
= 20
mA
100
ns
Turn-off Delay Time
t
d(off)
V
GS(on)
= 3.0
V
30
ns
Fall Time
t
f
R
G
= 10
,
R
L
= 150
35
ns
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
10 %
90 %
V
GS
(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
τ
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
#
#
#
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