參數(shù)資料
型號: 2SK1299
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場效應(yīng)晶體管
文件頁數(shù): 3/9頁
文件大?。?/td> 48K
代理商: 2SK1299
2SK1299(L), 2SK1299(S)
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
100
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
±
10
μ
A
μ
A
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 80 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 2 A, V
GS
= 10 V *
1
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
100
V
GS(off)
R
DS(on)
1.0
2.0
V
Static Drain to source on state
resistance
0.25
0.35
0.30
0.45
I
D
= 2 A, V
GS
= 4 V
1
*
I
D
= 2 A, V
DS
= 10 V *
1
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
Forward transfer admittance
|yfs|
2.4
4.0
S
Input capacitance
Ciss
400
pF
Output capacitance
Coss
165
pF
Reverse transfer capacitance
Crss
45
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
5
ns
I
D
= 2 A, V
GS
= 10 V,
R
L
= 15
Rise time
35
ns
Turn-off delay time
160
ns
Fall time
60
ns
Body to drain diode forward
voltage
1.0
V
I
F
= 3 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note:
1. Pulse test
t
rr
135
ns
I
F
= 3 A, V
= 0,
di
F
/dt = 50 A/
μ
s
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PDF描述
2SK1299L Silicon N-Channel MOS FET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK12996 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
2SK1299L 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET
2SK1299S 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET
2SK1300 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET