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參數(shù)資料
| 型號(hào)： | 2SJ687-ZK-E2-AY |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封裝： | LEAD FREE, MP-3ZK, TO-252, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 161K |
| 代理商： | 2SJ687-ZK-E2-AY |
Data Sheet D18719EJ2V0DS
2
2SJ687
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS =
20 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS = m12 V, VDS = 0 V
m100
nA
Gate to Source Cut-off Voltage
VGS(off)
VDS =
10 V, ID = 1 mA
0.6
1.2
1.45
V
Forward Transfer Admittance
Note
| yfs |
VDS =
10 V, ID = 10 A
20
S
Drain to Source On-state Resistance
Note
RDS(on)1
VGS =
4.5 V, ID = 10 A
5.4
7.0
m
Ω
RDS(on)2
VGS =
3.0 V, ID = 10 A
7.1
9.0
m
Ω
RDS(on)3
VGS =
2.5 V, ID = 10 A
10.8
20
m
Ω
Input Capacitance
Ciss
VDS =
10 V,
4400
pF
Output Capacitance
Coss
VGS = 0 V,
1070
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
760
pF
Turn-on Delay Time
td(on)
VDD =
10 V, ID = 10 A,
36
ns
Rise Time
tr
VGS =
4.5 V,
220
ns
Turn-off Delay Time
td(off)
RG = 3
Ω
270
ns
Fall Time
tf
310
ns
Total Gate Charge
QG
VDD =
16 V,
57
nC
Gate to Source Charge
QGS
VGS =
4.5 V,
12
nC
Gate to Drain Charge
QGD
ID =
20 A
28
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF =
20 A, VGS = 0 V
0.85
1.5
V
Reverse Recovery Time
trr
IF =
20 A, VGS = 0 V,
200
ns
Reverse Recovery Charge
Qrr
di/dt =
100 A/
μs
240
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
Ω
50
Ω
L
VDD
VGS =
12 → 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS()
D.U.T.
RL
VDD
τ = 1 s
μ
Duty Cycle
≤ 1%
VGS
Wave Form
VDS
Wave Form
VGS()
10%
90%
VGS
10%
0
VDS()
90%
td(on)
tr
td(off)
tf
10%
τ
VDS
0
ton
toff
PG.
50
Ω
D.U.T.
RL
VDD
IG =
2 mA
<R>
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