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參數(shù)資料
| 型號： | 2SJ649 |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 60 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ISOLATED, TO-220, 3 PIN |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 204K |
| 代理商： | 2SJ649 |
Data Sheet D16332EJ1V0DS
2
2SJ649
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Condtions
MIN.
TYP.
MAX.
Unit
Zero Gate Voltage Drain Current
IDSS
VDS = –60 V, VGS = 0 V
–10
A
Gate Leakage Current
IGSS
VGS =
m 20 V, VDS = 0 V
m 10
A
Gate Cut-off Voltage
VGS(off)
VDS = –10 V, ID = –1 mA
–1.5
–2.0
–2.5
V
Forward Transfer Admittance
Note
| yfs |VDS = –10 V, ID = –10 A
10
20
S
RDS(on)1
VGS = –10 V, ID = –10 A
38
48
m
Drain to Source On-state Resistance
Note
RDS(on)2
VGS = –4.0 V, ID = –10 A
47
75
m
Input Capacitance
Ciss
VDS = –10 V
1900
pF
Output Capacitance
Coss
VGS = 0 V
350
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
140
pF
Turn-on Delay Time
td(on)
VDD = –30 V, ID = –10 A
10
ns
Rise Time
tr
VGS = –10 V
10
ns
Turn-off Delay Time
td(off)
RG = 0
73
ns
Fall Time
tf
17
ns
Total Gate Charge
QG
VDD = –48 V
38
nC
Gate to Source Charge
QGS
VGS = –10 V
7
nC
Gate to Drain Charge
QGD
ID = –20 A
10
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 20 A, VGS = 0 V
0.95
V
Reverse Recovery Time
trr
IF = 20 A, VGS = 0 V
49
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
100
nC
Note Pulsed: PW
≤ 350
s, Duty Cycle ≤ 2%
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG
L
VDD
VGS = –20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS (
)
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
VDS
Wave Form
VGS (
)
10%
90%
10%
0
VDS (
)
90%
td(on)
tr
td(off)
tf
10%
τ
VDS
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG =
2 mA
VGS
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| 2SJ649-AZ | 功能描述:MOSFET P-CH -60V -20A TO-220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SJ650 | 功能描述:MOSFET P-CH 60V 12A TO-220ML RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SJ651 | 功能描述:MOSFET P-CH 60V 20A TO-220ML RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SJ651_03 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:DC / DC Converter Applications |
| 2SJ651-S | 制造商:ON Semiconductor 功能描述: |
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