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參數(shù)資料
| 型號： | 2SJ626 |
| 廠商： | NEC Corp. |
| 英文描述： | Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V |
| 中文描述： | MOS場效應(yīng)管 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 65K |
| 代理商： | 2SJ626 |
Data Sheet D15962EJ1V0DS
5
2SJ626
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
0
-0.01
200
400
600
800
-0.1
I
D
- Drain Current - A
-1
-10
Pulsed
V
GS
=
10 V
-25
°
C
25
°
C
75
°
C
T
A
= 125
°
C
0
-0.01
200
400
600
800
-0.1
I
D
- Drain Current - A
-1
-10
Pulsed
V
GS
=
4.5 V
25
°
C
25
°
C
75
°
C
T
A
= 125
°
C
R
D
R
D
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
SWITCHING CHARACTERISTICS
0
-0.01
200
400
600
800
-0.1
-1
-10
Pulsed
V
GS
=
4.0 V
-25
°
C
25
°
C
75
°
C
T = 125
T
°
C
1
10
100
1000
-0.1
-1
-10
V
DD
=
30 V
V
GS
=
10 V
R
G
= 10
t
d(off)
t
f
t
r
t
d(on)
R
D
I
D
- Drain Current – A
t
d
,
r
,
d
,
f
I
D
- Drain Current - A
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1
10
100
1000
-0.1
-1
-10
-100
V
GS
= 0 V
f = 1.0 MHz
C
iss
C
oss
C
rss
0.01
0.1
1
10
0.4
0.6
0.8
1
1.2
Pulsed
V
GS
= 0 V
C
i
,
o
,
r
V
DS
- Drain to Source Voltage - V
I
F
V
F(S-D)
- Source to Drain Voltage - V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ626-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
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| 2SJ628 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SJ629 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SJ630 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
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