參數(shù)資料
型號(hào)： 2SJ625
廠商： NEC Corp.
英文描述： T-NPN-SI HIGH CURRENT AMP
中文描述： MOS場(chǎng)效應(yīng)管
文件頁(yè)數(shù)： 5/8頁(yè)
文件大?。?/td> 66K
代理商： 2SJ625
Data Sheet D15961EJ1V0DS
5
2SJ625
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
D
50
100
150
200
250
300
-0.01
-0.1
-1
-10
-100
V
GS
=
4.5 V
Pulsed
25°C
25°C
75°C
T
A
= 125°C
I
D
- Drain Current - A
R
D
50
100
150
200
250
300
-0.01
-0.1
-1
-10
V
GS
=
2.5 V
Pulsed
25°C
25°C
75°C
T
A
= 125°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
SWITCHING CHARACTERISTICS
R
D
50
100
150
200
250
300
-0.01
-0.1
-1
-10
V
GS
=
1.8 V
Pulsed
25°C
25°C
75°C
T
A
= 125°C
I
D
- Drain Current - A
t
d
,
r
,
d
,
f
10
100
1000
-0.1
-1
-10
V
DD
=
10 V
V
GS
=
4.0 V
R
G
= 10
t
d(off)
t
d(on)
t
f
t
r
I
D
- Drain Current - A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
C
i
,
o
,
r
10
100
1000
-0.1
-1
-10
-100
V
GS
= 0 V
f = 1.0 MHz
C
iss
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
I
F
0.01
0.1
1
10
100
0.4
0.6
0.8
1
1.2
1.4
Pulsed
V
GS
= 0 V
V
F(S-D)
- Source to Drain Voltage - V
相關(guān)PDF資料
PDF描述
2SJ626 Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ625-T1B-A 制造商:Renesas Electronics 功能描述:Cut Tape
2SJ625-T1B-A/XM 制造商:Renesas Electronics Corporation 功能描述:
2SJ626 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR
2SJ626-T1B 制造商:Renesas Electronics Corporation 功能描述:
2SJ626-T1B-A 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 1.5A 3-Pin Thin-Type Mini-Mold T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,1.5A,0.31ohm,SC-96MM 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 1.5A 3-Pin Thin-Type Mini-Mold T/R
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