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參數(shù)資料
| 型號： | 2SJ620 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Bipolar Transistor; Package/Case:TO-3; Current Rating:10A; Voltage Rating:35V |
| 中文描述： | 東芝場效應(yīng)晶體管硅P通道馬鞍山類型（二級-ヰ- MOSV） |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 225K |
| 代理商： | 2SJ620 |
2SJ620
2002-09-11
4
200
40
120
80
0
0
40
VDD 80 V
VGS
VDS
16
4
12
8
0
20
40
80
120
160
200
Common source
ID 18 A
Tc 25°C
pulse test
D
D
G
t
Case temperature Tc (°C)
R
DS (ON)
Tc
D
D
Drain-source voltage V
DS
(V)
I
DR
V
DS
D
D
Drain-source voltage V
DS
(V)
Capacitance – V
DS
C
Case temperature Tc (°C)
V
th
Tc
Case temperature Tc (°C)
P
D
Tc
D
D
G
G
Total gate charge Q
g
(nC)
Dynamic input/output characteristics
0
0.20
0.10
0.05
0.15
80
40
0
40
80
160
120
Common source
pulse test
ID 18 A
9
4.5
VGS 4 V
VGS 10 V
0.3
100
0.5
3
10
5
1.0
0
0.4
1.2
1.6
2.0
2.4
0.8
30
50
Common source
Tc 25°C
pulse test
1
VGS 0, 1 V
5
10
1000
3000
1
0.1
100
10
Ciss
Coss
Crss
Common source
VGS 0 V
f 1 MHz
Tc 25°C
100
300
5000
30000
0.3
3
30
50000
500
10000
0
40
80
120
160
1
3
2
4
0
80
40
Common source
VDS 10 V
ID 1 mA
pulse test
200
50
100
0
0
150
40
80
120
160
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