- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄371536 > 2SJ620 (Toshiba Corporation) Bipolar Transistor; Package/Case:TO-3; Current Rating:10A; Voltage Rating:35V PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SJ620 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Bipolar Transistor; Package/Case:TO-3; Current Rating:10A; Voltage Rating:35V |
| 中文描述： | 東芝場(chǎng)效應(yīng)晶體管硅P通道馬鞍山類型（二級(jí)-ヰ- MOSV） |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 225K |
| 代理商： | 2SJ620 |
2SJ620
2002-09-11
2
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
16 V, V
DS
0 V
10
A
Drain cut-OFF current
I
DSS
V
DS
100 V, V
GS
0 V
100
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
10 mA, V
GS
0 V
100
V
Gate threshold voltage
V
th
V
DS
10 V, I
D
1 mA
0.8
2.0
V
V
GS
4 V, I
D
9 A
85
120
Drain-source ON resistance
R
DS (ON)
V
GS
10 V, I
D
9 A
63
90
m
Forward transfer admittance
Y
fs
V
DS
10 V, I
D
6 A
7
15
S
Input capacitance
C
iss
2900
Reverse transfer capacitance
C
rss
480
Output capacitance
C
oss
V
DS
10 V, V
GS
0 V, f 1 MHz
1000
pF
Rise time
t
r
25
Turn-ON time
t
on
45
Fall time
t
f
25
Switching time
Turn-OFF time
t
off
170
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
140
Gate-source charge
Q
gs
90
Gate-drain (“miller”) charge
Q
gd
V
DD
80 V, V
GS
10 V, I
D
18 A
50
nC
Source-Drain Ratings and Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
DR
18
A
Pulse drain reverse current
(Note 1)
I
DRP
72
A
Forward voltage (diode)
V
DSF
I
DR
18 A, V
GS
0 V
1.7
V
Reverse recovery time
t
rr
220
s
Reverse recovery charge
Q
rr
I
DR
18 A, V
GS
0 V,
dI
DR
/dt 50 A/ s
0.97
C
Marking
※
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
※
Type
J620
Duty
1%, t
w
10 s
10 V
0
V
V
GS
R
L
5
V
DD
50 V
I
D
9
A
V
OUT
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ75 | SILICON P-Channel Transistor 2SJ75 |
| 2SK0065 | For Impedance Conversion In Low Frequency |
| 2SK0123 | For Impedance Conversion In Low Frequency |
| 2SK0198 | For Low-Frequency Amplification |
| 2SK198 | For Low-Frequency Amplification |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ620(TE24L,Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 60V 5A 4-Pin(2+2Tab) TFP T/R |
| 2SJ620_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon P Channel MOS Type Switching Regulator and DC-DC Converter Applications |
| 2SJ620_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
| 2SJ621 | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ621-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。