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參數(shù)資料
| 型號(hào)： | 2SJ607-ZJ-AZ |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 83 A, 60 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | MP-25ZJ, 3 PIN |
| 文件頁(yè)數(shù)： | 10/10頁(yè) |
| 文件大?。?/td> | 208K |
| 代理商： | 2SJ607-ZJ-AZ |
Data Sheet D14655EJ3V0DS
7
2SJ607
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
2) TO-262 (MP-25 Fin Cut)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0 TYP.
3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP.
5.9
MIN.
6.0
MAX.
15.5
MAX.
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
φ
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
10 TYP.
1.3±0.2
0.75±0.3
2.54 TYP.
8.5±
0.2
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
1.0±0
.5
4
3) TO-263 (MP-25ZJ)
4) TO-220SMD (MP-25Z)
Note
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
5.7±0.4
4
4.8 MAX.
1.3±0.2
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7±0.2
10 TYP.
0.5R
TYP.
0.8R
TYP.
2.8±0.2
10 TYP.
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
3.0±0.5
1.1±0.4
4
4.8 MAX.
1.3±0.2
0.5±0.2
0.5R
TYP.
0.8R
TYP.
0.75±0.3
2.8±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Note This package is produced only in Japan.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
5
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SJ607-ZJ-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
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| 2SJ609 | 制造商:ON Semiconductor 功能描述: |
| 2SJ610 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Switching Regulator, DC-DC Converter and Motor Drive Applications |
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