參數(shù)資料
型號: 2SJ610
元件分類: JFETs
英文描述: 2 A, 250 V, 2.55 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SC-64, 3 PIN
文件頁數(shù): 1/6頁
文件大?。?/td> 222K
代理商: 2SJ610
2SJ610
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV)
2SJ610
Switching Regulator, DC-DC Converter and
Motor Drive Applications
Low drain-source ON resistance: RDS (ON) = 1.85 (typ.)
High forward transfer admittance: |Yfs| = 18 S (typ.)
Low leakage current: IDSS = 100 A (VDS = 250 V)
Enhancement mode: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
250
V
Drain-gate voltage (RGS = 20 k)
VDGR
250
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
2.0
Drain current
Pulse (t
= 1 ms)
(Note 1)
IDP
4.0
A
Drain power dissipation
PD
20
W
Single pulse avalanche energy
(Note 2)
EAS
180
mJ
Avalanche current
IAR
2.0
A
Repetitive avalanche energy (Note 3)
EAR
2.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
6.25
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
125
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C..
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 75 mH, IAR = 2.0 A,
RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Please handle with
caution.
Unit: mm
JEDEC
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
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