- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370100 > 2SJ606 (NEC Corp.) Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0712-0 00; No. of Positions: 32; Connector Type: Panel; Contact Gender: Male; Contact Spacing (mm): 2; Terminal Pitch (mm): 2; Current Rating(Amps)(Max.): 2; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -30 to 85; General Description: In-line adapter; Both ends male contacts; Pin contact PDF資料下載
參數(shù)資料
| 型號： | 2SJ606 |
| 廠商： | NEC Corp. |
| 英文描述： | Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0712-0 00; No. of Positions: 32; Connector Type: Panel; Contact Gender: Male; Contact Spacing (mm): 2; Terminal Pitch (mm): 2; Current Rating(Amps)(Max.): 2; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -30 to 85; General Description: In-line adapter; Both ends male contacts; Pin contact |
| 中文描述： | MOS場效應管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 78K |
| 代理商： | 2SJ606 |
Data Sheet D14654EJ3V0DS
2
2SJ606
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
60 V, V
GS
= 0 V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
m
20 V, V
DS
= 0 V
V
DS
=
10 V, I
D
=
1 mA
m
10
2.5
μ
A
Gate Cut-off Voltage
V
GS(off)
1.5
2.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
=
10 V, I
D
=
42 A
38
74
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
=
10 V, I
D
=
42 A
12
15
m
R
DS(on)2
V
GS
=
4.0 V, I
D
=
42 A
16
23
m
Input Capacitance
C
iss
V
DS
=
10 V
4800
pF
Output Capacitance
C
oss
V
GS
= 0 V
1200
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
340
pF
Turn-on Delay Time
t
d(on)
V
DD
=
30 V, I
D
=
42 A
13
ns
Rise Time
t
r
V
GS
=
10 V
13
ns
Turn-off Delay Time
t
d(off)
R
G
= 0
290
ns
Fall Time
t
f
160
ns
Total Gate Charge
Q
G
V
DD
=
48 V
120
nC
Gate to Source Charge
Q
GS
V
GS
=
10 V
20
nC
Gate to Drain Charge
Q
GD
I
D
=
83 A
30
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 83 A, V
GS
= 0 V
1.1
V
Reverse Recovery Time
t
rr
I
F
= 83 A, V
GS
= 0 V
60
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
120
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
=
20
→
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
(
)
D.U.T.
R
L
V
DD
τ
= 1
s
Duty Cycle
≤
1%
μ
V
GS
Wave Form
V
DS
Wave Form
V
GS
(
)
10%
90%
10%
0
V
DS
(
)
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
V
DS
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
=
2 mA
V
GS
相關PDF資料 |
PDF描述 |
|---|---|
| 2SJ606-S | Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0633-6 00; No. of Positions: 32; Connector Type: Panel; Contact Gender: Male; Contact Spacing (mm): 2; Terminal Pitch (mm): 2; Current Rating(Amps)(Max.): 2; Operating Temperature Range (degrees C): -30 to 85; General Description: In-line plug; Male contact; Pin contact termination |
| 2SJ606-Z | MOS FIELD EFFECT TRANSISTOR |
| 2SJ606-ZJ | MOS FIELD EFFECT TRANSISTOR |
| 2SJ607 | MOS FIELD EFFECT TRANSISTOR |
| 2SJ607-S | MOS FIELD EFFECT TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ606-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -83A 15m@10V TO220AB 制造商:Renesas Electronics 功能描述:Pch -60V -83A 15m@10V TO220AB Cut Tape 制造商:Renesas Electronics 功能描述:Pch -60V -83A 15m@10V TO220AB Bulk 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,83A,12m ohm,TO-220AB 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 83A 3-Pin(3+Tab) TO-220AB |
| 2SJ606-S | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ606-Z | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ606-Z(AZ) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SJ606-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復。