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參數(shù)資料
| 型號(hào)： | 2SJ603 |
| 廠商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 79K |
| 代理商： | 2SJ603 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2000, 2001
MOS FIELD EFFECT TRANSISTOR
2SJ603
SWITCHING
P-CHANNEL POWER MOS FET
DATA SHEET
Document No.
Date Published
Printed in Japan
D14648EJ3V0DS00 (3rd edition)
July 2002 NS CP(K)
The mark
#
shows major revised points.
DESCRIPTION
The 2SJ603 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
Super low on-state resistance:
R
DS(on)1
= 48 m
MAX. (V
GS
=
10 V, I
D
=
13 A)
R
DS(on)2
= 75 m
MAX. (V
GS
=
4.0 V, I
D
=
13 A)
Low input capacitance:
C
iss
= 1900 pF TYP. (V
DS
=
10
V, V
GS
= 0 V)
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
I
AS
E
AS
60
m
20
m
25
m
70
50
1.5
150
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation
(T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
55 to +150
25
62.5
Notes 1.
PW
≤
10
μ
s, Duty cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
=
30 V, R
G
= 25
, V
GS
=
20
→
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ603
TO-220AB
2SJ603-S
TO-262
2SJ603-ZJ
TO-263
2SJ603-Z
TO-220SMD
Note
Note
TO-220SMD package is produced only in
Japan.
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ603-S | MOS FIELD EFFECT TRANSISTOR |
| 2SJ603-Z | Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0514-7 00; No. of Positions: 30; Connector Type: Wire; Contact Gender: Female; Contact Spacing (mm): 2; Terminal Pitch (mm): 2; Current Rating(Amps)(Max.): 2; Operating Temperature Range (degrees C): -30 to 85; General Description: Housing; For Discrete wire; Crimping |
| 2SJ604 | MOS FIELD EFFECT TRANSISTOR |
| 2SJ604-S | MOS FIELD EFFECT TRANSISTOR |
| 2SJ604-Z | MOS FIELD EFFECT TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ603-S | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ603-Z | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ603-ZJ | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ604 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ604-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -45A 30m@10V TO220AB Bulk 制造商:Renesas Electronics 功能描述:Pch -60V -45A 30m@10V TO220AB Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,45A,23m ohm,TO-220AB 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 45A 3-Pin(3+Tab) TO-220AB |
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