參數(shù)資料
型號(hào)： 2SJ602-S
廠商： NEC Corp.
英文描述： MOS FIELD EFFECT TRANSISTOR
中文描述： MOS場(chǎng)效應(yīng)管
文件頁數(shù)： 4/8頁
文件大?。?/td> 82K
代理商： 2SJ602-S
Data Sheet D14647EJ3V0DS
4
2SJ602
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
–
1
–
0.1
150
100
50
0
–
10
–
100
Pulsed
V
GS
=
–
4.0 V
–
4.5 V
–
10 V
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
Pulsed
–
4
–
1
–
2
–
3
–
5
V
DS
=
–
10 V
–
10
–
1
–
0.1
–
100
T
A
=
55
C
25
C
75
C
125
C
–
0.01
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
f
–
0.01
–
0.1
–
1
10
100
–
10
–
100
0.1
1
Pulsed
V
DS
=
–
10 V
0.01
T
= 125
C
75
C
25
C
55
C
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -
C
V
G
V
DS
=
–
10 V
I
D
=
–
1 mA
–
1.0
–
2.0
–
3.0
–
50
0
50
100
0
150
–
4.0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
0
–
4
–
6
–
8
–
60
–
50
–
40
–
30
–
20
–
10
0
–
2
Pulsed
–
10
–
4.5 V
–
4.0 V
V
GS
=
–
10 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
120
V
GS
- Gate to Source Voltage - V
R
D
0
–
5
–
10
–
15
–
20
Pulsed
100
80
60
40
20
0
I
D
=
–
20 A
–
10 A
–
4 A
相關(guān)PDF資料
PDF描述
2SJ603-ZJ MOS FIELD EFFECT TRANSISTOR
2SJ603 MOS FIELD EFFECT TRANSISTOR
2SJ603-S MOS FIELD EFFECT TRANSISTOR
2SJ603-Z Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0514-7 00; No. of Positions: 30; Connector Type: Wire; Contact Gender: Female; Contact Spacing (mm): 2; Terminal Pitch (mm): 2; Current Rating(Amps)(Max.): 2; Operating Temperature Range (degrees C): -30 to 85; General Description: Housing; For Discrete wire; Crimping
2SJ604 MOS FIELD EFFECT TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ602-Z 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR
2SJ602-ZJ 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR
2SJ603 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor
2SJ603-S 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR
2SJ603-Z 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR
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