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參數(shù)資料
| 型號(hào)： | 2SJ599-Z |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 中文描述： | 開關(guān)P溝道功率MOS FET工業(yè)用 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 40K |
| 代理商： | 2SJ599-Z |
Preliminary Data Sheet D14644EJ1V0DS
2
2SJ599
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
–
60
V, V
GS
= 0
V
–
10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
+
20
V, V
DS
= 0
V
+
10
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
=
–
10
V, I
D
=
–
1
mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
=
–
10
V, I
D
=
–
10
A
8
16
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
=
–
10
V, I
D
=
–
10
A
60
75
m
R
DS(on)2
V
GS
=
–
4.0
V, I
D
=
–
10
A
78
111
m
Input Capacitance
C
iss
V
DS
=
–
10
V,
1300
pF
Output Capacitance
C
oss
V
GS
= 0
V,
240
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
100
pF
Turn-on Delay Time
t
d(on)
I
D
=
–
10
A,
8
ns
Rise Time
t
r
V
GS(on)
=
–
10
V,
9
ns
Turn-off Delay Time
t
d(off)
V
DD
=
–
30
V,
52
ns
Fall Time
t
f
R
G
= 0
16
ns
Total Gate Charge
Q
G
I
D
=
–
20A,
26
nC
Gate to Source Charge
Q
GS
V
DD
=
–
48
V,
5
nC
Gate to Drain Charge
Q
GD
V
GS
=
–
10
V
7
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
=
–
20
A, V
GS
= 0
V
1.0
V
Reverse Recovery Time
t
rr
I
F
=
–
20
A, V
GS
= 0
V
51
ns
Reverse Recovery Charge
Q
rr
di/dt =
–
100
A
/
μ
s
102
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG
L
V
DD
V
GS
= –20 V
→
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
(
)
D.U.T.
R
L
V
DD
τ
= 1
s
Duty Cycle
≤
1%
μ
V
GS
Wave Form
V
DS
Wave Form
V
GS
(
)
10%
90%
V
GS
(on)
10%
0
V
DS
(
)
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
V
DS
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
=
2 mA
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|---|---|
| 2SJ599-Z-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -20A 75m@10V TO252 Bulk |
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