參數(shù)資料
型號(hào): 2SJ598
廠商: NEC Corp.
英文描述: SWITCHING P-CHANNEL POWER MOS FET
中文描述: 開(kāi)關(guān)P溝道功率MOS FET
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 154K
代理商: 2SJ598
Data Sheet D14656EJ4V0DS
4
2SJ598
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
D
0
–5
–10
–15
–20
Pulsed
200
150
100
50
0
I
D
= –6 A
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
Pulsed
–4
–1
–2
–3
–5
V
DS
= –10 V
–10
–1
–0.1
–100
T
A
=
55
C
25
C
75
C
150
C
–0.01
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
–1
–0.1
300
200
100
0
–10
–100
Pulsed
V
GS
= –4.0 V
–4.5 V
–10 V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
0
–4
–6
–8
–50
–40
–30
–20
–10
0
–2
Pulsed
V
GS
= –10 V
–10
–4.0 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
f
–0.01
–0.1
–1
10
100
–10
–100
0.1
1
Pulsed
V
DS
= –10 V
T
= 150
C
75
C
25
C
50
C
0.01
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -
C
V
G
V
DS
= –10 V
I
D
= –1 mA
–1.0
–2.0
–3.0
–50
0
50
100
0
150
–4.0
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