參數(shù)資料
型號: 2SJ598-Z
元件分類: 小信號晶體管
英文描述: 12000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
封裝: TO-252, MP-3Z, 3 PIN
文件頁數(shù): 4/8頁
文件大小: 111K
代理商: 2SJ598-Z
Data Sheet D14656EJ5V0DS
4
2SJ598
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
Ω
0
–5
–10
–15
–20
Pulsed
200
150
100
50
0
ID = –6 A
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
Pulsed
–1
–2
–3
–4
–5
VDS = –10 V
–10
–1
–0.1
–100
TA =
55C
25C
75C
150C
–0.01
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
Ω
–1
–0.1
300
200
100
0
–10
–100
Pulsed
VGS = –4.0 V
–4.5 V
–10 V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
0
–4
–6
–8
–50
–40
–30
–20
–10
0
–2
Pulsed
VGS = –10 V
–10
–4.0 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
|
y
fs
|
-
Forward
Transfer
Admittance
-
S
–0.01
–0.1
–1
10
100
–10
–100
0.1
1
Pulsed
VDS = –10 V
TA = 150C
75C
25C
50C
0.01
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
V
GS(off)
-
Gate
Cut-off
Voltage
-
V
VDS = –10 V
ID = –1 mA
–1.0
–2.0
–3.0
–50
0
50
100
0
150
–4.0
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相關代理商/技術參數(shù)
參數(shù)描述
2SJ598-Z-AZ 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) TO-252 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) TO-252 Bulk 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) TO-252 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) TO-252
2SJ598-ZK-E1-AZ 制造商:Renesas Electronics Corporation 功能描述:P CHANNEL POWER MOS FET
2SJ599 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor
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2SJ599-Z 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE