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參數(shù)資料
| 型號： | 2SJ598-Z |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 12000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封裝： | TO-252, MP-3Z, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 111K |
| 代理商： | 2SJ598-Z |
Data Sheet D14656EJ5V0DS
2
2SJ598
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = –60 V, VGS = 0 V
–10
μA
Gate Leakage Current
IGSS
VGS =
m16 V, VDS = 0 V
m10
μA
Gate Cut-off Voltage
VGS(off)
VDS = –10 V, ID = –1 mA
–1.5
–2.0
–2.5
V
Forward Transfer Admittance
| yfs |
VDS = –10 V, ID = –6 A
5
11
S
Drain to Source On-state Resistance
RDS(on)1
VGS = –10 V, ID = –6 A
102
130
m
Ω
RDS(on)2
VGS = –4.0 V, ID = –6 A
131
190
m
Ω
Input Capacitance
Ciss
VDS = –10 V
720
pF
Output Capacitance
Coss
VGS = 0 V
150
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
50
pF
Turn-on Delay Time
td(on)
ID = –6 A
7
ns
Rise Time
tr
VGS = –10 V
4
ns
Turn-off Delay Time
td(off)
VDD = –30 V
35
ns
Fall Time
tf
RG = 0
Ω
10
ns
Total Gate Charge
QG
ID = –12 A
15
nC
Gate to Source Charge
QGS
VDD= –48 V
3
nC
Gate to Drain Charge
QGD
VGS = –10 V
4
nC
Body Diode Forward Voltage
VF(S-D)
IF = 12 A, VGS = 0 V
0.98
V
Reverse Recovery Time
trr
IF = 12 A, VGS = 0 V
50
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A /
μs
100
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
Ω
50
Ω
L
VDD
VGS =
20 → 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS()
D.U.T.
RL
VDD
τ = 1 s
μ
Duty Cycle
≤ 1%
VGS
Wave Form
VDS
Wave Form
VGS()
10%
90%
VGS
10%
0
VDS()
90%
td(on)
tr
td(off)
tf
10%
τ
VDS
0
ton
toff
PG.
50
Ω
D.U.T.
RL
VDD
IG =
2 mA
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ598-Z-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) TO-252 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) TO-252 Bulk 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) TO-252 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) TO-252 |
| 2SJ598-ZK-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:P CHANNEL POWER MOS FET |
| 2SJ599 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SJ599-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -12A 130m@10V TO251 制造商:Renesas Electronics 功能描述:Pch -60V -12A 130m@10V TO251 Bulk 制造商:Renesas Electronics 功能描述:Pch -60V -12A 130m@10V TO251 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 20A 3-Pin(3+Tab) TO-251 |
| 2SJ599-Z | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
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